High pressure MOCVD reactor system
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 23, 2000
Grant Date -
N/A
app pub date -
Jan 8, 1997
filing date -
Jan 8, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An apparatus and method is disclosed for providing vapor-phase epitaxial growth on a substrate using a Metal Organic Chemical Vapor Deposition (MOCVD) process. The process is performed in a reactive chamber pressurized to greater than one atmosphere. The reactant gases to be deposited on the substrate are also pressurized to the equivalent pressure, and then introduced into the reactor chamber. By performing the MOCVD process at a pressure greater than one atmosphere, a reduced amount of reactant gas is required to complete the deposition process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully