Ferroelectric dynamic random access memory
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United States of America Patent
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May 23, 2000
Grant Date -
N/A
app pub date -
Sep 16, 1998
filing date -
Oct 14, 1997
priority date (Note) -
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Abstract
A memory including an array of memory cells, each of which includes a ferroelectric field effect transistor (FET) as its memory element; and sense and refresh circuitry connected to the array of memory cells to read stored data within each cell by sensing source-to-drain conductivity of the ferroelectric transistor and to refresh the stored data.
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