Semiconductor device and production method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6069388
SERIAL NO

08984144

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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On a silicon substrate 1 is provided a silicon oxide film 2, on which a polycrystalline silicon film 3 is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600.degree. C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1.times.10.sup.20 atoms/cm.sup.3 to 1.times.10.sup.21 atoms/cm.sup.3 to form a phosphosilicate glass film 6, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film 5 on the surface. A polycrystalline silicon film 4 is formed on the dielectric film 5, which is treated as the oriented polycrystalline silicon film 3a to form an oriented polycrystalline silicon film 4a. The oriented polycrystalline silicon film 4a as an upper electrode and the oriented polycrystalline silicon film 3a as a lower electrode are wired to obtain a semiconductor device having a capacitor. Further, a thin film transistor of a high dielectric strength can be produced in a short time on the polycrystalline silicon which is oriented in a short time.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
Asahi Kasei Microsystems Co., Ltd.TOKYO46

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okusa, Yoshihiro Nobeoka, JP 2 15
Yamauchi, Tatsuya Nobeoka, JP 7 31

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (1)
* 5859683 Transmissive liquid crystal display apparatus and method for producing the same 81 1996
 
NIPPON SHEET GLASS COMPANY, LIMITED (1)
* 5220482 Thin film capacitor 8 1992
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 5290729 Stacked type capacitor having a dielectric film formed on a rough surface of an electrode and method of manufacturing thereof 65 1992
 
MOTOROLA, INC. (1)
* 5420072 Method for forming a conductive interconnect in an integrated circuit 68 1994
 
CHANG LIAO HOLDINGS, LLC (1)
* 5880496 Semiconductor having self-aligned polysilicon electrode layer 4 1997
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
ADVANCED MICRO DEVICES, INC. (1)
* 6507044 Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication 27 1999
 
Ultrasource, Inc. (9)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
GOLD CHARM LIMITED (1)
* 6261705 Poly-si film and a semiconductor device wherein the poly-si film is applied 4 1998
 
CARSEM (M) SDN. BHD (2)
* 8535988 Large panel leadframe 1 2012
8674488 Light emitting diode (LED) packages 3 2013
* Cited By Examiner