Chemical bath having a uniform etchant overflow
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United States of America Patent
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Jun 6, 2000
Grant Date -
N/A
app pub date -
Jun 5, 1997
filing date -
Jun 5, 1996
priority date (Note) -
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status (Latency Note)
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Abstract
A chemical bath of an overflow-type includes an inner bath which includes a plurality of holes on its sidewalls. The holes are formed in such a manner that they are spaced apart from the upper end of the inner bath at a predetermined distance. In this chemical bath, the chemical in the inner bath flows over the upper end of the inner bath into the outer bath and is simultaneously is discharged to the outer bath through the holes. Accordingly, unless either of the opposed sidewalls slopes lower than another by over a predetermined value, the chemical can flow continuously at nearly the same rate at both sidewalls of the inner bath. This reduces the difference of the etching rate between the respective wafers caused by the difference of the position of the wafers immersed in the chemical in the inner bath and leads to an improvement in the reliability of the etching process.
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