Product wafer junction leakage measurement using light and eddy current
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United States of America Patent
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Jun 6, 2000
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N/A
app pub date -
Jul 30, 1997
filing date -
Jul 30, 1997
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Abstract
A method for measuring junction leakage in a semiconductor product wafer while applying varying light to the wafer. A surface photovoltage characteristic for the wafer and an eddy current characteristic for the wafer in response to the light are measured. A junction leakage characteristic for at least one of junction types is determined by simultaneously measuring the surface photovoltage and the induced eddy current characteristics in response to a light flash.
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