Importance

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Abstract

A support 200 for supporting a substrate 50 in a plasma process chamber 20, comprises a dielectric member 205 having an electrode embedded therein, and having a receiving surface for receiving the substrate. An electrical conductor 210 supporting the dielectric member 205, comprises a peripheral portion 228 extending beyond the electrode in the dielectric member. A voltage supply 158 supplies an RF bias voltage to the electrode embedded in the dielectric member 205 to capacitively couple RF power from the electrode to the conductor 210, and optionally, supplies a DC voltage to electrostatically hold the substrate 50 to the dielectric member. A collar ring 230 on the peripheral portion 228 of the conductor 210, comprises a RF electrical field absorption that is sufficiently low to capacitively couple RF power from the peripheral portion of the conductor through the collar ring to a plasma sheath that extends; above the collar ring, during use of the chuck in the plasma process chamber 20. The extended RF field around the perimeter of the substrate 130 provides enhanced and more uniform plasma processing of the substrate.

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First Claim