Method of making mask pattern utilizing auxiliary pattern forbidden region
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United States of America Patent
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-
Jun 13, 2000
Grant Date -
N/A
app pub date -
Jun 12, 1998
filing date -
Jun 18, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A mask pattern including an auxiliary pattern for improving printing accuracy is easily formed. A process of making the auxiliary pattern includes the steps of: providing an auxiliary pattern forbidden region around an original pattern based on the original pattern formed by an original pattern generating means (step S1); providing an auxiliary pattern formation region around the auxiliary pattern forbidden region based on the auxiliary pattern forbidden region provided in step S1 (step S2); and forming an auxiliary pattern of specific width based on the auxiliary pattern formation region provided in step S2 (step S3). Such formation of the auxiliary pattern prevents neighboring two traces of auxiliary pattern from touching or overlapping each other, for example. An auxiliary pattern is easily formed even if an original pattern is a complicated one without repeatability.
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