A thin film capacitor for use in semiconductor integrated circuit devices such as analog circuits, rf circuits, and dynamic random access memories (DRAMs), and a method for its fabrication, is disclosed. The capacitor has a dielectric thickness less than about 50 nm, a capacitance density of at least about 15 fF/.mu.m.sup.2, and a breakdown field of at least about 1 MV/cm. The dielectric material is a metal oxide of either titanium, niobium, or tantalum. The metal oxide can also contain silicon or nitrogen. The dielectric material is formed over a first electrode by depositing the metal onto the substrate or onto a first electrode formed on the substrate. The metal is then anodically oxidized to form the dielectric material of the desired thickness. A top electrode is then formed over the dielectric layer. The top electrode is a metal that does not degrade the electrical characteristics (e.g. the leakage current or the breakdown voltage) of the dielectric layer.
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