Method of programming phase-change memory element
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 13, 2000
Grant Date -
N/A
app pub date -
Jun 22, 1999
filing date -
Jun 22, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully