Method of forming ultra-thin and conformal diffusion barriers encapsulating copper
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United States of America Patent
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Jun 20, 2000
Grant Date -
N/A
app pub date -
Mar 19, 1997
filing date -
Mar 29, 1996
priority date (Note) -
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Abstract
A method is provided for forming thin diffusion barriers in a semiconductor device (10). In one embodiment of the invention, a metal precursor gas is introduced to a surface of a dielectric layer. A predetermined amount of heat is then applied to the metal precursor gas and the dielectric layer. The heat causes the metal precursor gas to react with the dielectric layer, thereby forming a uniform, relatively thin diffusion barrier on the surface of the dielectric layer. In another embodiment of the invention, a metal precursor gas is introduced to a surface of a metal conductor. A predetermined amount of heat can then be applied to the metal precursor gas and the metal conductor, which creates a reaction between the gas and the conductor, and thereby produces a thin diffusion barrier on the surface of the metal conductor.
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