Capacitor structure of semiconductor device for high dielectric constant

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United States of America Patent

PATENT NO 6078093
SERIAL NO

08961070

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Abstract

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A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
LG SEMICON CO., LTD.CHUNGCHEONGBUK-DO592

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chang Jae Chungcheongbuk-do, KR 43 575

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