Capacitor structure of semiconductor device for high dielectric constant

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6078093
SERIAL NO

08961070

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
LG Semicon Co., Ltd.CHUNGCHEONGBUK-DO592

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chang Jae Chungcheongbuk-do, KR 42 547

Cited Art Landscape

Patent Info (Count) # Cites Year
 
NATIONAL SEMICONDUCTOR CORPORATION (1)
* 5581110 Integrated circuit with trenches and an oxygen barrier layer 28 1995
 
NORTH CAROLINA STATE UNIVERSITY (1)
* 5555486 Hybrid metal/metal oxide electrodes for ferroelectric capacitors 145 1994
 
MICRON TECHNOLOGY, INC. (2)
* 5108943 Mushroom double stacked capacitor 20 1991
* 5150276 Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings 100 1992
 
KABUSHIKI KAISHA TOSHIBA (1)
* 5291058 Semiconductor device silicon via fill formed in multiple dielectric layers 18 1992
 
NEC ELECTRONICS CORPORATION (1)
* 5604696 Stacked capacitor type semiconductor memory device with good flatness characteristics 117 1995
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
* 5460996 Method for the fabrication of a stacked capacitor all in the dynamic semiconductor memory device 30 1994
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 6724033 Fork-like memory structure for ULSI DRAM 1 1999
 
RENESAS TECHNOLOGY CORP. (1)
* 2004/0089,891 Semiconductor device including electrode or the like having opening closed and method of manufacturing the same 7 2003
 
LUCENT TECHNOLOGIES INC. (1)
* 6320244 Integrated circuit device having dual damascene capacitor 74 1999
 
Ultrasource, Inc. (8)
* 6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
MICRON TECHNOLOGY, INC. (1)
6707096 Fork-like memory structure for ULSI DRAM and method of fabrication 2 2002
 
RENESAS ELECTRONICS CORPORATION (1)
* 6399399 Method for manufacturing semiconductor memory and method for manufacturing capacitor 15 2001
 
ROHM CO., LTD. (1)
* 6900486 Ferroelectric memory and method for manufacturing same 0 1999
 
ALTERA CORPORATION (1)
* 6829127 High performance capacitor structure 1 2003
* Cited By Examiner