Multi-layer approach for optimizing ferroelectric film performance
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United States of America Patent
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Jun 27, 2000
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N/A
app pub date -
Jul 18, 1997
filing date -
Jul 18, 1997
priority date (Note) -
Expired
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Abstract
A multi-layer ferroelectric thin film includes a nucleation layer, a bulk layer, and an optional cap layer. A thin nucleation layer of a specific composition is implemented on a bottom electrode to optimize ferroelectric crystal orientation and is markedly different from the composition required in the bulk of a ferroelectric film. The bulk film utilizes the established nucleation layer as a foundation for its crystalline growth. A multi-step deposition process is implemented to achieve a desired composition profile. This method also allows for an optional third composition adjustment near the upper surface of the film to ensure compatibility with an upper electrode interface and to compensate for interactions resulting from subsequent processing.
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