Methodology for achieving dual gate oxide thicknesses
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United States of America Patent
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Jun 27, 2000
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app pub date -
Dec 18, 1997
filing date -
Dec 18, 1997
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Abstract
Dual gate oxide layer thicknesses are achieved by depositing a thin blocking layer on active regions of a semiconductor substrate, such as silicon nitride, oxynitride, or oxide. Selected active regions are nitridated through a patterned photoresist mask formed thereon. The blocking layer protects the substrate from the photoresist mask and enables nitriding, as by ion implantation, plasma exposure, or rapid thermal annealing.
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