Room temperature wet chemical growth process of SiO based oxides on silicon
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United States of America Patent
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Jun 27, 2000
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N/A
app pub date -
Mar 22, 1999
filing date -
Mar 22, 1999
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Abstract
Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.
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