Capacitor having a ferroelectric layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6081417
SERIAL NO

09073519

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A capacitor is produced by forming, on an area of a lower electrode which is inside the outer periphery of the lower electrode, a ferroelectric layer which becomes a capacitive part, in a state that the side of the ferroelectric layer is covered by an insulator, and then forming an upper electrode on the ferroelectric layer.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RENESAS ELECTRONICS CORPORATIONTOKYO11993

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuki, Takeo Tokyo, JP 24 278

Cited Art Landscape

Patent Info (Count) # Cites Year
 
CYPRESS SEMICONDUCTOR CORPORATION (2)
* 5866926 Ferroelectric memory device with capacitor electrode in direct contact with source region 11 1993
* 5475248 Semiconductor device with a conductive reaction-preventing film 70 1994
 
RAMTRON INTERNATIONAL CORPORATION (3)
* 5293510 Semiconductor device with ferroelectric and method of manufacturing the same 104 1991
* 5369296 Semiconductor device having a ferroelectric film in a through-hole 32 1993
* 5495117 Stacked ferroelectric memory cell 44 1994
 
U.S. PHILIPS CORPORATION (1)
* 5744832 Semiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrier 45 1995
 
ROHM CO., LTD. (1)
* 5841160 Semiconductor device having a capacitor electrode made of iridium 10 1996
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 5382817 Semiconductor device having a ferroelectric capacitor with a planarized lower electrode 65 1993
 
Radiant Technologies, Inc. (1)
* 5804850 Ferroelectric based capacitor cell for use in memory systems 24 1996
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (2)
* 2003/0205,738 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 0 2003
* 2005/0106,761 Ferroelectric capacitors with metal oxide for inhibiting fatigue 2 2004
 
SYMBIOS, INC. (1)
* 6284586 Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following masking 18 1999
 
KOREA JCC CO., LTD. (2)
* 8004821 Metal capacitor and manufacturing method thereof 0 2008
* 7826195 Metal capacitor and manufacturing method thereof 1 2009
 
Ultrasource, Inc. (8)
* 6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
Semiconductor Energy Laboratory Co., Ltd. (2)
9087745 Semiconductor device and method for manufacturing the same 9 2012
9111804 Semiconductor device and method for manufacturing the same 7 2012
 
TEXAS INSTRUMENTS INCORPORATED (1)
* 6582977 Methods for determining charging in semiconductor processing 1 2002
 
SAMSUNG ELECTRONICS CO., LTD. (3)
* 6872618 Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigue 5 2003
* 2004/0000,687 Ferroelectric capacitors with metal oxide for inhibiting fatigue and methods of forming the same 0 2003
6987308 Ferroelectric capacitors with metal oxide for inhibiting fatigue 0 2004
 
STMICROELECTRONICS SA (1)
* 2004/0131,762 Manufacturing of a high-capacitance capacitor 4 2003
 
KABUSHIKI KAISHA TOSHIBA (2)
* 6603161 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 15 2001
6762065 Semiconductor device having ferroelectric capacitor and method for manufacturing the same 1 2003
 
MURATA MANUFACTURING CO., LTD. (1)
* 6477033 Nonlinear dielectric element 1 2001
 
OKI SEMICONDUCTOR CO., LTD. (1)
* 6342337 Ferroelectric memory cell fabrication method 1 1999
 
SAMWHA ELECTRIC CO., LTD. (1)
* 2008/0285,210 Metal capacitor and manufacturing method thereof 0 2008
* Cited By Examiner