Method to perform selective drain engineering with a non-critical mask
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United States of America Patent
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Jul 4, 2000
Grant Date -
N/A
app pub date -
Jul 10, 1997
filing date -
Jul 10, 1997
priority date (Note) -
Expired
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Abstract
A method of producing an asymmetrical semiconductor device with ion implantation techniques and semiconductor devices constructed according to this method in which a barrier of ion absorbing material of height h is positioned beside a structure on a semiconductor surface. The barrier is located at a maximum distance d from one side of the structure, and an angled ion implant is directed at the side of the structure. The maximum distance d of the barrier from the side of the structure is equal to the height of the barrier h divided by the tangent of the angle of the ion implant so that the side of the structure is shadowed from the ion implant. A second ion implant is directed to the opposite side of the structure on the semiconductor surface, thereby forming a desired implant and producing the asymmetrical semiconductor device.
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