Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
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United States of America Patent
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-
Jul 4, 2000
Issued Date -
N/A
app pub date -
Nov 14, 1995
filing date -
May 20, 1993
priority date (Note) -
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Abstract
Textured semi-conductor devices, such as macro textured buried-contact solar cells, are produced with special front contact trenches to increase efficiency and decrease costs. In order to produce the front contact trenches, front channels and narrower metallization grooves are cut in the semi-conductor body. The front contact trenches are plated to form attractive conductive buried contacts comprising flush metallization fingers and bus bars.
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