Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current
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United States of America Patent
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Jul 4, 2000
Grant Date -
N/A
app pub date -
Aug 19, 1999
filing date -
Aug 19, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
An ETOX cell formed in a semiconductor substrate is disclosed. The ETOX cell includes a p-well formed within the substrate. A floating-gate is formed above the p-well, the floating-gate being separated from the substrate by a thin oxide layer. Next, a control gate is formed above the floating-gate, the floating-gate and the control gate being separated by a dielectric layer. A drain region is formed in the p-well and adjacent to a first edge of the floating-gate. The drain region is of a first dopant type. Finally, a source region is formed in the p-well and adjacent to a second edge of the floating-gate, the source region being of a second dopant type.
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