Lateral power MOSFET with improved gate design
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United States of America Patent
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Jul 4, 2000
Grant Date -
N/A
app pub date -
Feb 18, 1999
filing date -
Feb 18, 1999
priority date (Note) -
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Abstract
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate design in which the gate structure is coupled to the gate electrode through contacts at a plurality of locations. The gate electrode is disposed over the gate structure along the length of a MOSFET finger. In one embodiment, the gate electrode is coupled to the gate structure through contacts at the ends of the MOSFET finger such that there is a contact-free portion of the gate region between the contacts.
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