Method of making a nonvolatile memory cell using EPROM mask and ROM processing steps
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United States of America Patent
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Jul 11, 2000
Grant Date -
N/A
app pub date -
Jul 9, 1997
filing date -
Jul 10, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to a method of automatically shifting from the fabrication of an EPROM cell to the fabrication of a ROM cell, which method is specifically intended for semiconductor electronic circuits having a resident memory and is of the type wherein the structure of at least one memory cell transistor is defined on a semiconductor substrate using photolithographic techniques including an active area and a channel region, the cell being adapted to acquire a logic state selected by the user. Advantageously, the conductivity of the active area is changed to suit the logical contents that the cell is intended to contain.
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