Method of making an interconnect using a tungsten hard mask
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United States of America Patent
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Jul 11, 2000
Grant Date -
N/A
app pub date -
Apr 20, 1998
filing date -
Apr 20, 1998
priority date (Note) -
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Abstract
An interconnect layer is fabricated using a tungsten hard mask by forming a tungsten based layer over an aluminum based layer. A photoresist layer is deposited over the tungsten based layer and patterned. The tungsten based layer is patterned by applying a fluorine-based etchant using the photoresist layer as an etch mask. Then the aluminum based layer is patterned by applying a chlorine based etchant using the tungsten based layer as an etch mask.
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