Process for selectively etching silicon nitride in the presence of silicon oxide
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United States of America Patent
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Jul 11, 2000
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N/A
app pub date -
Jan 25, 1999
filing date -
Jan 22, 1997
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Abstract
An improved wet etchant process is provided which has greater selectivity than existing hot phosphoric acid etching processes and which maintains a high etch rate in use. The etchant composition includes a second acid having a boiling point higher than that of the phosphoric acid.
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