Radio frequency power MOSFET device having improved performance characteristics
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United States of America Patent
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Jul 11, 2000
Issued Date -
N/A
app pub date -
Oct 31, 1997
filing date -
Oct 31, 1997
priority date (Note) -
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Abstract
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET reduces the gate coverage of the drain region of the device in order to decrease the device gate to drain capacitance C.sub.gd. A significant portion of the gate overlaying the drain region is eliminated by the removal of a portion of a polysilicon layer that is disposed over a substantial portion of the drain region that resides between the channel portions of the body regions of the device. The resulting open area, that is subsequently covered by an oxide layer, separates the polysilicon gate electrodes of the device. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.
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