Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
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United States of America Patent
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-
Jul 18, 2000
Grant Date -
N/A
app pub date -
Aug 15, 1997
filing date -
Aug 15, 1997
priority date (Note) -
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Abstract
A platform for processing a substrate includes a first member and a second member. The first member includes a first support surface for supporting the substrate during processing. The second member includes a second support surface, which supports the first member thereon, and a third support surface, which is adapted to be supported in a processing chamber. The first and second members are releasably coupled together in a manner which permits unrestrained relative thermal expansion of the two members and also of the substrate. The platform is suitable for use in a processing reactor which includes a heater housing and an outer reactor housing. The heater housing encloses a heater assembly and provides a surface for supporting the platform during processing. The reactor also includes a gas injector for injecting at least one processing gas into the processing chamber for deposition on the substrate.
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