Method for forming a semiconductor device structure having a laser portion
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 18, 2000
Issued Date -
N/A
app pub date -
Jun 9, 1999
filing date -
Nov 17, 1992
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The layer and RFM facets were formed using an in-situ multistep reactive ion etch process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully