High density plasma etching of metallization layer using chlorine and nitrogen
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United States of America Patent
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Jul 18, 2000
Grant Date -
N/A
app pub date -
Mar 26, 1996
filing date -
Mar 26, 1996
priority date (Note) -
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Abstract
A method in a plasma processing chamber for etching through a selected portion of a metallization layer of a wafer's layer stack. The method includes the step of etching at least partially through the metallization layer of the layer stack with an etchant source gas that consists essentially of chlorine and nitrogen. In another embodiment, the metallization layer comprises aluminum, and the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 10:1. More preferably, the flow ratio of the chlorine to the nitrogen ranges from about 1:1 to about 4:1 and preferably ranges from about 1:1 to about 2:1.
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