Semiconductor devices
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United States of America Patent
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Jul 18, 2000
Grant Date -
N/A
app pub date -
Jan 20, 1998
filing date -
Jan 21, 1997
priority date (Note) -
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Abstract
An Insulated Gate Bipolar Transistor has a gate in the form of a trench positioned in a p region in a silicon body. The device operates in a thyristor mode having a virtual emitter which is formed during operation by the generation of an inversion layer at the bottom of the trench within the p region. The device is inherently safe and turns off rapidly as removal of a gate signal collapses the emitter. As the trench gate is situated within the p region, it can withstand high voltages when turned off as the reverse electric field is prevented from reaching the trench gate.
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