Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 18, 2000
Grant Date -
N/A
app pub date -
May 11, 1999
filing date -
May 11, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention provides a structure comprising: a first oxide film having a first thickness and extending on a first region of a semiconductor substrate; and a second oxide film having a second thickness which is thicker than the first thickness of the first oxide film, the second oxide film extending on a second region of the semiconductor substrate, wherein the first oxide film contains a first substance which is capable of decreasing an oxidation rate of a thermal oxidation process, while the second oxide film contains a second substance which is capable of increasing the oxidation rate of the thermal oxidation process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully