MOSFET device having recessed gate-drain shield and method
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United States of America Patent
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Jul 18, 2000
Grant Date -
N/A
app pub date -
Oct 29, 1999
filing date -
Mar 30, 1998
priority date (Note) -
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Abstract
A method of fabricating a MOSFET transistor and resulting structure having a drain-gate feedback capacitance shield formed in a recess between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since one additional non-critical mask is required with selective etch used to create the recess.
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