Method for writing data into non-volatile semiconductor memory cell
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 18, 2000
Grant Date -
N/A
app pub date -
Aug 31, 1998
filing date -
Sep 25, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method including: a first writing step for writing data by injecting electrons into the floating gate; a first verifying step for verifying whether the threshold voltage is higher than the first reference level after performing the first writing operation; a step of repeating the first writing step and the first verifying step until the threshold voltage becomes higher than the first reference level, if the threshold voltage is lower than the first reference level; a second verifying step for verifying whether the threshold voltage is higher than a second reference level which is set to be higher than the first reference level, if the threshold voltage is higher than the first reference level; a step of ending the writing operation if the threshold voltage is lower than the second reference level; and a second writing step for writing data by discharging electrons from the floating gate until the threshold voltage becomes higher than the first reference level and lower than the second reference level, if the threshold voltage is higher than the second reference level.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully