Quantum well laser with a composition-graded interface at the quantum well
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United States of America Patent
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Jul 18, 2000
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N/A
app pub date -
Mar 17, 1998
filing date -
Oct 25, 1996
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Abstract
Quantum well lasers are herein made with purposely-graded interfaces which control the interdiffusion of atoms during high temperature processing. The result is a predictably-graded, large interface between the quantum well and the waveguide layers to either side thereof. The process is highly controllable and produces unique structures which exhibit surprisingly high power in a repeatable manner.
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