Method of utilizing a plasma gas mixture containing argon and CF.sub.4 to clean and coat a conductor
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United States of America Patent
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Jul 25, 2000
Issued Date -
N/A
app pub date -
Mar 16, 1999
filing date -
Mar 16, 1999
priority date (Note) -
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Abstract
A method for cleaning and coating a conductor in a plasma reaction chamber utilizing a plasma gas mixture containing Argon and CF.sub.4 to clean and coat a conductor. The method for cleaning and coating a conductor includes the combination of cleaning processes including, physical reduction and chemical reaction and the formation of a polymerization passivation film formed on oxyfluoro metal compositions (SnO.sub.x F.sub.y) which occur during exposure of a conductor to the process of the invention. The polymerization passivation film is formed as a result of the combination of the degraded carbon Tetrafloride (CF.sub.4) gas and degraded environmental and casual hydrocarbons which are present in the form of a variety of unspecified organic contaminants to form crude polymeric molecules in the high energy environment of the plasma. The treatment of conductive surfaces according to the method of the present invention has shown to allow a soldering operation for 3 to 8 hours following treatment without additional preparation, cleaning or treatment.
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