Dielectric materials of amorphous compositions of TI-O.sub.2 doped with rare earth elements and devices employing same
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United States of America Patent
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Jul 25, 2000
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N/A
app pub date -
Jun 4, 1998
filing date -
Jun 4, 1998
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Abstract
A dielectric film useful for a capacitor in a DRAM device comprises an amorphous composition of Ti.sub.1-y M.sub.y O.sub.x, where y is approximately in the range 0.01 to 0.50, x is approximately 1.0 to 2.0, and M is a lanthanide rare earth element and advantageously, selected from the group of neodymium (Nd), terbium (Tb) and dysprosium (Dy). The concentration of dopants in the a-TiO.sub.2 film is preferably from 5 to 50 at. % and more preferably from 10 to 30 at. %. The inventive dielectric materials have a high dielectric constant of greater than 30 and figure of merit of greater than 9.0 .mu.C/cm.sup.2.
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