US Patent No: 6,093,951

Number of patents in Portfolio can not be more than 2000

MOS devices with retrograde pocket regions

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Abstract

Disclosed is a low threshold asymmetric MOS device having a pocket region with a graded concentration profile. The pocket region includes a relatively high dopant atom concentration (of the same conductivity type as the bulk region) abutting either the device's source or its drain along the side of the source or drain that faces the device's channel region. The pocket region's graded concentration profile provides a lower dopant concentration near the substrate surface and an increasing dopant concentration below that surface. This provides a relatively low resistance conduction path through the pocket region, while allowing the device's threshold voltage to be somewhat higher at the pocket region. The asymmetric device can also include a counter dopant region located beneath its substrate surface. This forces current to flow in the substrate but just above the region of high counter dopant concentration, where the resistance is relatively low.

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First Claim

Related Publications

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SUN MICROSYSTEMS, INC.SANTA CLARA, CA9061

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burr, James B Foster City, CA 120 1681

Cited Art

Patent Info (Count) # Cites Year
 
SUN MICROSYSTEMS, INC. (3)
5,773,863 Low power, high performance junction transistor 66 1994
5,650,340 Method of making asymmetric low power MOS devices 77 1995
5,753,958 Back-biasing in asymmetric MOS devices 47 1995
 
FREESCALE SEMICONDUCTOR, INC. (1)
5,712,501 Graded-channel semiconductor device 43 1995
 
INTERSIL CORPORATION (1)
5,429,958 Process for forming twin well CMOS integrated circuits 18 1993
 
KABUSHIKI KAISHA TOSHIBA (1)
5,031,008 MOSFET transistor 14 1990
 
LAWRENCE LIVERMORE NATIONAL SECURITY, LLC (1)
5,565,377 Process for forming retrograde profiles in silicon 15 1994
 
MOTOROLA, INC. (1)
5,605,855 Process for fabricating a graded-channel MOS device 39 1995
 
NXP B.V. (1)
5,486,480 Method of fabrication of protected programmable transistor with reduced parasitic capacitances 18 1994
 
RCA CORPORATION (1)
4,208,780 Last-stage programming of semiconductor integrated circuits including selective removal of passivation layer 31 1978
 
SILICONIX INCORPORATED (1)
5,744,994 Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp 47 1996

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
SUN MICROSYSTEMS, INC. (15)
6,303,444 Method for introducing an equivalent RC circuit in a MOS device using resistive wells 55 2000
6,586,817 Device including a resistive path to introduce an equivalent RC circuit 4 2001
6,583,001 Method for introducing an equivalent RC circuit in a MOS device using resistive paths 5 2001
6,624,687 Method and structure for supply gated electronic components 8 2001
6,552,601 Method for supply gating low power electronic devices 10 2001
6,489,224 Method for engineering the threshold voltage of a device using buried wells 66 2001
6,621,318 Low voltage latch with uniform sizing 35 2001
6,605,971 Low voltage latch 1 2001
6,501,295 Overdriven pass transistors 14 2001
6,489,804 Method for coupling logic blocks using low threshold pass transistors 10 2001
6,472,919 Low voltage latch with uniform stack height 2 2001
6,965,151 Device including a resistive path to introduce an equivalent RC circuit 3 2003
6,800,924 Device including a resistive path to introduce an equivalent RC circuit 0 2003
6,781,213 Device including a resistive path to introduce an equivalent RC circuit 3 2003
6,777,779 Device including a resistive path to introduce an equivalent RC circuit 2 2003
 
KABUSHIKI KAISHA TOSHIBA (3)
6,268,629 Field effect transistor with reduced narrow channel effect 9 1999
6,548,866 Field effect transistor with reduced narrow channel effect 5 2001
7,417,285 Semiconductor device having a trench capacitor and a MOSFET connected by a diffusion layer and manufacturing method thereof 0 2005
 
MICRON TECHNOLOGY, INC. (3)
7,285,468 Methods of forming semiconductor constructions 0 2003
7,274,056 Semiconductor constructions 1 2005
7,227,227 Reduced leakage semiconductor device 1 2005
 
FREESCALE SEMICONDUCTOR, INC. (2)
6,887,758 Non-volatile memory device and method for forming 36 2002
6,713,812 Non-volatile memory device having an anti-punch through (APT) region 22 2002
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
6,825,530 Zero Threshold Voltage pFET and method of making same 11 2003
7,005,334 Zero threshold voltage pFET and method of making same 0 2004
 
PANASONIC CORPORATION (2)
7,429,771 Semiconductor device having halo implanting regions 1 2005
7,851,867 Integrated circuit and method of manufacturing the same 0 2006
 
SAMSUNG ELECTRONICS CO., LTD. (2)
7,238,982 Split gate type flash memory device and method for manufacturing same 0 2005
7,410,871 Split gate type flash memory device and method for manufacturing same 0 2007
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (2)
6,897,526 Semiconductor device and process for producing the same 10 1999
7,687,855 Semiconductor device having impurity region 0 2005
 
ADVANCED MICRO DEVICES, INC. (1)
6,407,428 Field effect transistor with a buried and confined metal plate to control short channel effects 4 2001
 
AGERE SYSTEMS GUARDIAN CORP. (1)
6,410,974 Simplified high Q inductor substrate 2 2001
 
APTINA IMAGING CORPORATION (1)
7,619,672 Retrograde well structure for a CMOS imager 0 2004
 
INTERNATIONAL RECTIFIER CORPORATION (1)
6,991,943 Process for preparation of semiconductor wafer surface 0 2003
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
6,720,632 Semiconductor device having diffusion layer formed using dopant of large mass number 7 2001
 
SANYO ELECTRIC CO., LTD. (1)
6,608,336 Lateral double diffused MOS transistor 6 2001
 
SHARP LABORATORIES OF AMERICA, INC. (1)
6,291,325 Asymmetric MOS channel structure with drain extension and method for same 15 1998
 
SPANSION LLC (1)
6,812,521 Method and apparatus for improved performance of flash memory cell devices 3 2000
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (1)
6,353,251 MOS gate Schottky tunnel transistor and an integrated circuit using the same 52 1998