Power semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Jul 25, 2000
Grant Date -
N/A
app pub date -
Aug 7, 1995
filing date -
Aug 5, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has an gold ion implant in a region of the device between two of or the two p-n junctions, which region is the base in the case of a bipolar transistor, located away from the current carrying active region of the device. The device has a low resistance and may be turned off rapidly because the implanted gold provides recombination centers which act as a sink for carriers drawing them from the active region.
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