Method for fabricating an integrated circuit structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Aug 1, 2000
Grant Date -
N/A
app pub date -
Jan 28, 1998
filing date -
Jan 31, 1997
priority date (Note) -
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status (Latency Note)
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Abstract
In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O.sub.2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a capacitor 12 dielectric 24. In turn, the capacitor could be used in a DRAM memory device.
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