Method of forming a capacitative section of a semiconductor device and method of forming a capacitative section and gate section of a semiconductor device

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United States of America Patent

PATENT NO 6096600
SERIAL NO

09038691

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The phosphorus concentration of an upper electrode and the phosphorus concentration of a lower electrode can be made equally high without loss of adhesion between the polysilicon and a metallic layer. It includes a step of forming a stacked layer structure consisting of: a lower electrode layer provided on an underlay, a dielectric layer provided on this lower electrode layer, and an upper electrode layer consisting of an impurity-doped layer and a metallic layer successively provided on this dielectric layer, and a step of doping the metallic layer with the same impurity as the impurity in the impurity-doped layer prior to heat treatment of the stacked layer structure.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OKI SEMICONDUCTOR CO., LTD.TOKYO179

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Azami, Junko Tokyo, JP 3 8

Cited Art Landscape

Patent Info (Count) # Cites Year
 
YAMAHA CORPORATION (1)
* 5618749 Method of forming a semiconductor device having a capacitor and a resistor 51 1995
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 5631188 Low voltage coefficient polysilicon capacitor 37 1995
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
Ultrasource, Inc. (8)
* 6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
INPHI CORPORATION (1)
* 8039355 Method for fabricating PIP capacitor 1 2009
 
CHUNG CHENG HOLDINGS, LLC (1)
* 6207495 Method of fabricating capacitors 3 2000
 
INFINEON TECHNOLOGIES AG (2)
7091083 Method for producing a capacitor 0 2004
* 2005/0037,591 Method for producing a capacitor 0 2004
 
APTINA IMAGING CORPORATION (2)
* 7635624 Dual gate structure for imagers and method of formation 0 2005
* 2006/0060,904 Dual gate structure for imagers and method of formation 5 2005
* Cited By Examiner