Importance

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Abstract

An arrangement (100) has a low voltage circuit (196') on a first doped well (110) and a high voltage circuit (197') on a second doped well (120) integrated into a common semiconductor substrate (105). The first well (110) laterally extends along a surface (106) of the substrate (105) to provide a voltage drop (.vertline.V.sub.LARGE .vertline.) between a first end (111) and a second end (112) so that potential differences between the circuits (196', 197') are substantially isolated. The low voltage circuit (196') controls a current from the second end (112) to provide a variable potential (by .vertline.V.sub.SMALL .vertline.) at the second end (112) which is communicated to other parts (193') of the second circuit (197') by a connection (150). The wells (110, 120) are spaced to provide isolation for potential magnitude changes between the second end (112) of the first well (110) and the second well (120) which are invoked by the first circuit (196').

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First Claim