Method for making advanced thermoelectric devices
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United States of America Patent
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Aug 8, 2000
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N/A
app pub date -
Nov 18, 1997
filing date -
Nov 18, 1997
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Abstract
Semiconductor materials optimized for their electrical conductivity and thermal conductivity promise much higher thermoelectric cooling power. The materials can achieve the same cooling or power generation capacity in thermopiles with less electron current compared with present bulk materials. Because less electron current is required to accomplish the same task, total thermopile semiconductor material cross-sectional area normal to thermal and electron flow is greatly reduced and the element length-to-cross-sectional area aspect ratio is increased. The net result is a significant improvement in the figure of merit, ZT, and in the device Coefficient of Performance (COP).
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