Method of forming microcrystalline silicon film, photovoltaic element, and method of producing same
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United States of America Patent
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Aug 8, 2000
Grant Date -
N/A
app pub date -
Nov 23, 1998
filing date -
Nov 27, 1997
priority date (Note) -
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Abstract
Provided is a method of forming a microcrystalline silicon film by a plasma CVD, which comprises introducing a high frequency electromagnetic wave into a film forming space through an electrode to induce a plasma thereby forming a deposited film on a substrate, wherein the relation of 400
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