Synchronous semiconductor memory device employing temporary data output stop scheme

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United States of America Patent

PATENT NO 6101151
SERIAL NO

09196245

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Abstract

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In a synchronous semiconductor memory device in which an internal clock signal from an internal timing clock signal generating circuit is branched in the form of a tree by driver circuits and applied to output buffers and data are output in synchronization with the internal clock signal, the driver circuit of the first stage is constituted by an NAND gate and an inverter. When output is to be temporarily stopped, an enabling signal is set to 'L' level, so that the NAND gate is closed, output of the clock signal to each driver circuit is stopped, and thus power consumption is reduced.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI DENKI KABUSHIKI KAISHATOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Morooka, Yoshikazu Hyogo, JP 30 1228
Nakase, Yasunobu Hyogo, JP 33 954
Watanabe, Naoya Hyogo, JP 90 1538
Yoshimura, Tsutomu Hyogo, JP 41 583

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