Method and apparatus for passive characterization of semiconductor substrates subjected to high energy (MEV) ion implementation using high-injection surface photovoltage
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United States of America Patent
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Aug 15, 2000
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app pub date -
Sep 28, 1998
filing date -
Nov 8, 1996
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Abstract
Probe structures for testing electrical interconnections to integrated circuit devices and other electronic components; particularly to testing integrated circuits devices with high density area array solder ball interconnections. The probe structure is formed from a substrated have a surface, with at least one electrical contact location having a perimeter which is raised above the surface, and a location within the boundaries of said perimeter which is raised above the surface.
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