Product wafer junction leakage measurement using corona and a kelvin probe
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United States of America Patent
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Aug 15, 2000
Grant Date -
N/A
app pub date -
Aug 5, 1997
filing date -
Aug 5, 1997
priority date (Note) -
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Abstract
Corona charge is applied to a semiconductor product wafer to reverse bias PN junctions. Measurements of voltage decay in the dark and in the light are made and combined to determine a PN junction leakage characteristic. A portion of the dark measurement is taken in the light to permit normalizing the light and dark measurements.
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