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Abstract

An inventive array of M.times.N thin film actuated mirrors includes an active matrix, a passivation layer, an etchant stopping layer and an array of M.times.N actuating structures. The active matrix includes a substrate, an array of M.times.N transistors, an adhesion layer, a diffusion barrier layer, an array of M.times.N connecting terminals and a stress balancing layer. The passivation layer is formed on top of the active matrix and the etchant stopping layer is formed on top of the passivation layer. The array of M.times.N actuating structures includes a first thin film electrode, a thin film electrodisplacive member, a second thin film electrode, an elastic member and a conduit. The diffusion barrier layer located between the substrate and the connecting terminal prevents diffusion of silicon (Si) from the substrate to the connecting terminals.

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First Claim