Apparatus for photolithography process with gas-phase pretreatment
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United States of America Patent
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Aug 22, 2000
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N/A
app pub date -
Sep 1, 1998
filing date -
Sep 1, 1998
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Abstract
The present invention discloses an apparatus for photolithography process with phase-pretreatment. The apparatus comprises several chambers: a vapor prime chamber, a vacuum-bake chamber, a chill-plate chamber, a coater chamber and a stepper chamber. Further, an interface chamber is between the stepper chamber and the apparatus. These chambers are connected together to a track system. A base gas is introduced into one of these chambers to perform a gas-phase pretreatment. The concentration of the base gas can be controlled and the processing time of the pretreatment process is well controlled by operating the apparatus. As a photoresist layer is applied on a substrate, the photoresist layer is hardened in the base gas to increase the depth of focus in photolithography process.
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