Vapor phase cleaning of alkali and alkaline earth metals
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United States of America Patent
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Aug 22, 2000
Grant Date -
N/A
app pub date -
Aug 29, 1997
filing date -
Aug 29, 1997
priority date (Note) -
Expired
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Abstract
A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.
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