Semiconductor thin film, method for manufacturing the same, and solar cell using the same

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United States of America Patent

PATENT NO 6107562
SERIAL NO

09271782

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Abstract

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A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTDOSAKA JAPAN OSAKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Yasuhiro Kyoto, JP 146 1992
Hayashi, Shigeo Kyoto, JP 164 1912
Negami, Takayuki Osaka, JP 37 767
Wada, Takahiro Osaka, JP 53 862

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