Ferroelectric transistors, semiconductor storage devices, method of operating ferroelectric transistors and method of manufacturing ferromagnetic transistors
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United States of America Patent
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Aug 22, 2000
Grant Date -
N/A
app pub date -
Oct 28, 1997
filing date -
Jun 6, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of manufacturing a ferroelectric transistor is provided by which the characteristic of the transistor is not degraded because of a heated process. The ferroelectric transistor has a gate unit on the underlying structure. The gate unit includes a gate electrode, a ferroelectric film and a gate insulation film deposited on one another in this order. A channel layer is provided on the gate insulation film. A first main electrode and a second main electrode are provided in a spaced apart manner on the channel layer. The channel layer is used as a channel in operating the transistor. Thus, the carrier density of the channel is controlled by using the spontaneous polarization of the ferroelectric film.
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