Semiconductor device having a plurality of buried wells
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United States of America Patent
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Aug 22, 2000
Issued Date -
N/A
app pub date -
Sep 23, 1998
filing date -
Sep 4, 1997
priority date (Note) -
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Abstract
A semiconductor device include: a substrate of a conductivity type; a first well provided in the substrate and of the same conductivity type as the conductivity type of the substrate; a second well provided in the substrate and of an opposite conductivity type to the conductivity type of the substrate; and a buried well provided at a deep position in the substrate and of the opposite conductivity type to the conductivity type of the substrate. A buried well of the same conductivity type as the conductivity type of the substrate is further provided so as to be in contact with at least a part of a bottom portion of the first well so that the first well is at least partially electrically connected to the substrate.
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