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Abstract

The nonvolatile semiconductor memory device comprises a memory cell array in which memory cell units having one or more reprogrammable nonvolatile memory cells are arranged in an array, a word line commonly connected to a same row of the one or more memory cells of the memory cell array, a data line commonly connected to a same column of the memory cell units of the memory cell array, sequence control section for controlling a sequence operation which reprograms data of the selected memory cell by a first operation for applying the voltage to reprogram data of the selected memory cell, and a second operation for verifying reprogrammed state of data to memory cell to which the voltage is applied, and voltage application section for applying to the first voltage higher than a power supply voltage to the word line corresponding to the memory cell to be data reprogrammed in the first period which is corresponds to at least partial period during a period of the first operation, in which in a second period corresponding to at least a part in periods which excludes the first period during the sequence operation, a setting voltage of the level of the first voltage is set to the voltage different from a setting voltage of a voltage level in the first period.

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